Evaluating the High Voltage and High Frequency Capability of Future GaN-Based Diodes, MOSFETs, and Novel Photoconductive Switches
Room: EV3.309, Bldg: Engineering Building, Concordia University, 1515 St. Catherine W, Montreal, Quebec, Canada, H3G1M8Wide bandgap semiconductor devices based on gallium nitride (GaN) offer myriads of advantages over traditional silicon (Si)-based devices for applications in power electronics. These advantages include higher voltage-handling capability with... Read more