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Ongoing

IEEE Student Competition Innovate for Impact Dec 7th up to 50 Teams

Virtual: https://events.vtools.ieee.org/m/436714

Details of the competition can be found at this landing page. Open to R1-7&9 (https://r3.ieee.org/ieee-mga-r3-and-atlanta-innovate-for-impact-university-student-competition/) Prizes awarded to IEEE Student Sections Registration (https://docs.google.com/forms/d/e/1FAIpQLSfWblOpxSoR3zxlNrj9HUu55rQp3QDnbzghJ8mZ_0p_QIBrUQ/viewform)(https://docs.google.com/forms/d/e/1FAIpQLSfWblOpxSoR3zxlNrj9HUu55rQp3QDnbzghJ8mZ_0p_QIBrUQ/viewform) https://1drv.ms/f/s!Agwc1kEvCwYXjIpMGXW5XM_uirZc2Q?e=knH23 Documents repository including recommended materials, Guidelines... Read more

Policy and Tech Talk

Virtual: https://events.vtools.ieee.org/m/433333

Despite the significant contributions engineers make to Canadian society, their involvement in core policy discussions remains limited. Recognizing this disconnect, IEEE Canada is undertaking initiatives to bridge this gap. With... Read more

Evaluating the High Voltage and High Frequency Capability of Future GaN-Based Diodes, MOSFETs, and Novel Photoconductive Switches

Room: EV3.309, Bldg: Engineering Building, Concordia University, 1515 St. Catherine W, Montreal, Quebec, Canada, H3G1M8

Wide bandgap semiconductor devices based on gallium nitride (GaN) offer myriads of advantages over traditional silicon (Si)-based devices for applications in power electronics. These advantages include higher voltage-handling capability with... Read more