IEEE OTTAWA AP/MTT WEBINAR: Characterizat ion and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design

Name: IEEE OTTAWA AP/MTT WEBINAR: Characterizat\nion and Modeling of GaN HEMT Trapping Effects for Microwave Circuit Design
Start: 2020-09-02T15:00:00+00:00
End: 2020-09-02T16:00:00+00:00
Location: Virtual: https://events.vtools.ieee.org/m/238482

September 2, 2020 @ 3:00 pm - 4:00 pm

Speaker(s): Prof. José C. Pedro, Virtual: https://events.vtools.ieee.org/m/238482