Gallium nitride (GaN) power devices have only recently become available commercially from different copmpanies. The new devices enable the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This webinar will review the characteristics and figures of marit of different types GaN devices enhancement and depletion mode and will give the status of vertical GaN power devices. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues such as unique reverse conduction behavior, dynamic RDS_ON, breakdown mechanisms, thermal design, device availability, and reliability qualification will be also discussed. Speaker(s): Tanya, EV.2.184 room, EV-Bulding, 1515 St. Catherine, West, , Montreal, Quebec, Canada, H3G 2W1