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Smart Power Devices and ICs with Wide and Extreme Bandgap Semiconductors

April 24 @ 3:00 pm - 4:30 pm

Co-sponsored by: IEEE Montreal Section and Concordia University

Silicon has long been the dominant, often exclusive, semiconductor of choice for high voltage power devices and ICs.  Over the last decade, power switching devices made of two wide bandgap (WBG) semiconductors, SiC and GaN are impacting power electronics systems with their commercial availability and performance improvement, and hence less power and more energy efficient, over conventional counterparts.  In this talk, the present status of the research, development and/or commercialization, as well as cost-effectiveness of smart power devices and ICs using wide (SiC, GaN) and extreme (Ga203, diamond, AIN) bandgap semiconductors in advanced energy efficient electronics systems is presented.  The technology obstacles and needs faced in these semiconductors as well as future trend in these power devices and ICs are also discussed.

Speaker(s): DR. T. PAUL CHOW,

Location:
Room: EV 3-309
Bldg: EV Building
Concordia University
Montreal, Quebec
H3G 1M8

Details

Date:
April 24
Time:
3:00 pm - 4:30 pm
Website:
More Information and Registration

Organizer

mojtaba.kahrizi@concordia.ca

Venue

Room: EV 3-309, Bldg: EV Building